PECVD Synthesis and Thermoelectric Properties of Thin Films of Lead Chalcogenides (PbTe)1−x(PbS)x

Lead-based ternary-chalcogenide thin films of the (PbTe)1−x(PbS)x system were obtained using plasma-enhanced chemical-vapor-deposition (PECVD) technique under conditions a nonequilibrium low-temperature argon plasma an RF discharge (40.68 MHz) at reduced pressure (0.01 Torr). High-purity elements directly used as starting materials, namely Pb, S and Te. Plasma–chemical synthesis was carried out on surface c-sapphire silicon substrate. The physicochemical properties studied various analytical methods. dependence Seebeck coefficient, resistivity power factor structural composition has been studied. thermoelectric characteristics found to be dependent film composition. Upon selection optimal sulfur concentration, one can increase compared single-phase PbS or PbTe films.